Real-time kinetic analysis of hydrogen abstraction and etching reactions using pulsed-gas pecvd of amorphous and microscrystalline silicon

摘要

Hydrogen elimination reactions,abstraction and etching,are monitored in real-time using a differentially pumped mass sepctrometer,while intermittently exposing a hydrogenated silicon surface to atomic deuterium.The mass spectrometer signals are used to predict the kinetics of teh abstration reaction,and to qualitatively treat the etch reaction.