Near-intrinsic microcrystalline silicon foruse in thin film transistors

摘要

Inverted-staggered thin film transistors (TFTs) incorporating hydrogenated microcrystalline silicon for both contact and channel regions have ben fabricated by plasma enhanced chemical vapour deposition (PECVD) using the high hydrogen-dilution method.The deposition parameters for the channel region were chosen to yield near-intrinsic material with a dark conductivity activation energy of 0.7 eV and a Tauc gap of 1.98 eV,while the doped contact layer was optimised to produce a high dark conductivity of 10 S/cm.