Influence of deposition conditions on the 1/f noise in hydrogenated amorphous silicon

摘要

The electronic properties of a series of n-type doped hydrogenated amorphous silicon (a-Si:H) films grown with deposition rates ranging from 2 A/s to 33 A/s have ben studied.In frared adsorption spectroscopy shows an increase in Si-H_2 films grown with deposition rates ranging from 2 A/s to 33 A/s have been studied.Infrared adsorption spectroscopy shows an increase in Si-H_2 content with depsition rate,concurrent with a desreasing conductivity,increasing thermal equilibration relaxation time,and increasing disorder at eh mobility edge as measured by the difference in thermopower and dark conductivity activation energies.The current 1/f noise properties become highly nonstationary,with increased variability and inapplicability of statistical analysis as the deposition rate increases.