Real-time esr observation during film growth of a-Si:H

摘要

In-situ electron-spin-resonance (ESR) measurements of film growth of hydorgenated amorphous silicon (a-Si:H) using a remote hydrogen plasma technique have been performed.The Si dangling-bond signal in a-Si:H during and after deposition has been detected,in addition to the gas-phase ESR signals both of atomic hydrogen and photo-excited SiH_x molecules.Dynamic changes of the Si dangling-bond signal intensity were observed when the deposition started and stopped,which has suggested the existence of a subsurface region with higher with higher spin density than that in the bulk region.