Effect of the Film Hydrogen Content and Deposition Type on the Grain Nucleation and Grain Growth During Crystallization of a-Si:H Films

摘要

We report the effect of the initial film hydrogen content (CH) on the crystallization kinetics, crystallite nucleation rate and grain growth rate when HWCVD and PECVD a-Si:H films are crystallized by annealing at 600 C. For the HWCVD films, both the incubation time and crystallization time decrease, and the full width at half maximum (FWHM) of the XRD (111) peak decreases with decreasing film CH. However, other sources of XRD line broadening exist in such materials in addition to crystallite size, including the density of crystallite defects. To address these issues, TEM measurements have also been performed on a-Si:H films deposited directly onto TEM grids.