In-Line Ambient Impurity Measurement on a Rapid Thermal Process Chamber by Atmospheric Pressure Ionization Mass Spectrometry

摘要

Gaseous impurities in the chamber of a SHS2800#epsilon# rapid thermal processor were quantitatively measured by using atomspheric pressure ionisatio nmass spectrometry (APIMS). APIMS is a very sensitive technique to detect trace impurities in a bulk (1 atm) gas. A wide dynamci range (0.1 ppb - 10 ppm) measurement was successfully performed which allowed in-situ monitoring of impurities during RTP. This work reports the fundamental behaviour of ambient impurities originating from different sources. The sources discussed in this paepr are threefold: system background, wafer loading, and the wafer itself. Ambient management requires a better understaneing of the independent contribution of each source on processing.