Issues in Emissivity of Silicon

摘要

The first qualitative resutls of the effects of backside surface roughness on the radiative properties of silicon as a function of temperature in the wavelength range of 1-20#mu#m are presented in this study. These measurements have been made utilizing a spectral emissometer operating at near- and mid-IR spectral range. Surface roughness of the silicon wafer has been observed to lead to increased emissivities.