首页> 外国专利> LIGHT EMISSION SILICON PARTICLE AND MANUFACTURING METHOD OF LIGHT EMISSION SILICON PARTICLE

LIGHT EMISSION SILICON PARTICLE AND MANUFACTURING METHOD OF LIGHT EMISSION SILICON PARTICLE

机译:发光硅颗粒及其制造方法

摘要

PROBLEM TO BE SOLVED: To provide a light emission silicon particle and a manufacturing method of the light emission silicon particle, the light emission silicon particle having silicon on its surface terminated with carbon, capable of providing a desired luminous color in a wide range from visible to near infrared and emitting light with high efficiency.SOLUTION: There are provided a light emission silicon particle and a manufacturing method of the light emission silicon particle including a porous silicon forming process for forming porous silicon by chemical etching a silicon raw material by using a solution containing hydrofluoric acid and oxidant and an organic group terminated silicon particle forming process for immersing the resulting porous silicon in an organic solvent, radiating an ultraviolet pulse laser with a wavelength of 323 nm or less while stirring the organic solvent to obtain silicon particles having a surface terminated by a monovalent organic group containing a carbon atom.SELECTED DRAWING: None
机译:解决的问题:为了提供一种发光硅颗粒及其制造方法,该发光硅颗粒的表面具有以碳终止的硅,该发光硅颗粒能够在可见光的宽范围内提供所需的发光颜色。解决方案:提供了一种发光硅颗粒及其制造方法,该方法包括一种多孔硅形成工艺,该工艺通过使用化学气相沉积法对硅原料进行化学蚀刻来形成多孔硅。含有氢氟酸和氧化剂的溶液和有机基团终止的硅颗粒形成工艺,用于将所得的多孔硅浸入有机溶剂中,在搅拌有机溶剂的同时照射波长为323 nm或更小的紫外线脉冲激光,以获得具有表面被含汽车的一价有机基团终止bon atom.Selected绘图:无

著录项

  • 公开/公告号JP2016216579A

    专利类型

  • 公开/公告日2016-12-22

    原文格式PDF

  • 申请/专利权人 GUNMA UNIV;

    申请/专利号JP20150101398

  • 发明设计人 NAKAMURA TOSHIHIRO;

    申请日2015-05-18

  • 分类号C09K11/08;C09K11/59;C01B33/02;

  • 国家 JP

  • 入库时间 2022-08-21 13:59:06

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