首页> 外国专利> NANO-SILICON PARTICLE EXCELLENT IN DURABILITY OF LIGHT EMISSION BRIGHTNESS AND ITS PRODUCING METHOD

NANO-SILICON PARTICLE EXCELLENT IN DURABILITY OF LIGHT EMISSION BRIGHTNESS AND ITS PRODUCING METHOD

机译:纳米硅颗粒具有优异的发光亮度耐久性及其制备方法

摘要

PROBLEM TO BE SOLVED: To provide nano-silicon particles excellent in durability of light emission brightness, which exhibit high brightness, emit fluorescence stably and each of which is coated with a protective film for deterioration prevention; and to provide a method for producing the same.;SOLUTION: The nano-silicon particles excellent in durability of light emission brightness emit fluorescence when they are irradiated with ultraviolet rays or visual rays and are characterized in that nano-silicon particles each having a particle size of ≤3.5 nm are coated with a protective film for deterioration prevention. The nano-silicon particles are produced by applying the protective film for deterioration prevention on the surface of the nano-silicon particles applied on a substrate by a high frequency plasma CVD process.;COPYRIGHT: (C)2007,JPO&INPIT
机译:解决的问题:提供发光亮度的耐久性优异,显示高亮度,稳定地发出荧光,并且为了防止劣化而被覆盖了保护膜的纳米硅粒子。解决方案:发光亮度耐久性优异的纳米硅颗粒在受到紫外线或可见光照射时会发出荧光,其特征在于,每个纳米硅颗粒均具有颗粒。为了防止变质,在尺寸小于或等于3.5nm的表面上涂覆了保护膜。纳米硅粒子是通过用高频等离子CVD工艺在基板上涂布的纳米硅粒子的表面涂布防止劣化的保护膜而制得的。COPYRIGHT:(C)2007,JPO&INPIT

著录项

  • 公开/公告号JP2007246329A

    专利类型

  • 公开/公告日2007-09-27

    原文格式PDF

  • 申请/专利权人 TOKYO DENKI UNIV;

    申请/专利号JP20060071644

  • 申请日2006-03-15

  • 分类号C01B33/02;C23C16/27;C23C16/505;C09K11/08;C09K11/59;

  • 国家 JP

  • 入库时间 2022-08-21 21:15:13

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