Self-organisation processes in InSb quantum dots grown on InP(001) by ALMBE

摘要

The structural characterisation of uncapped InSb quantum dots grown on (001) InP substrates by ALMBE is reported. The analysis has been performed by AFM and TEM paying special attention to dot size, surface density and mechanism of strain relaxation. The amount of deposited InSb ranges between 2 and 7 ML's. Results show that good quality dots are obtained. For the first stages of growth, island density rises and sizes diminish. When the maximum value of density is attained, island size begins to increase. Dots have an anisotropic shape being elongated in (110), parallel to a surface undulation. Strain relaxation takes place by means of a misfit dislocation array.