Structural and optical characterisation of MOVPE self-assembled InSb quantum dots in InAs and GaSb matrices

摘要

Transmission electron microscopy (TEM) and photoluminescence (PL) were used to study metal organic vapour phase epitaxy (MOVPE) self-assembled InSb quantum dots (QDs) grown for the first time in InAs and GaSb matrices. Coherently strained InSb QDs were observed in the InAs matrix sample with a number density 3 approx approx 3x10~9 cm~(-2) and diameter 5-10 nm. PL emission was obtained at 3.5 mum, the longest wavelength yet reported for self-assembled semiconductor QDs. Coherently strained InSb QDs were also observed in the GaSb matrix sample together with larger relaxed InSb islands.