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Transmission electron microscopy investigation of FeAs precipitates in GaAs/AlGaAs heterostructures

机译:GaAs / AlGaAs异质结构中FeAs沉淀的透射电镜研究

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Furnace annealing at 850 deg C of GaAs/Al_(0.4)Ga_(0.6)As heterostructures grown by liquid phase epitaxy (LPE) causes the formation of regularly shaped precipitates in a subsurface layer. Cross-sectional transmission electron microscopy (XTEM) observation of the heterostructures shows that the main boundaries of these precipitates are parallel to the low-index crystallographic planes.
机译:GaAs / Al_(0.4)Ga_(0.6)As在850摄氏度下通过液相外延(LPE)生长的异质结构导致的退火在地下层中形成规则形状的沉淀。异质结构的截面透射电子显微镜(XTEM)观察表明,这些析出物的主边界平行于低折射率晶体平面。

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