HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPY OF AlAs/GaAs/AlGaAs MULTILAYER HETEROSTRUCTURE

摘要

A multilayer heterostructure of GaAs/AlAs/GaAs/AlGaAs/GaAs, which was prepared by molecular beam epitaxy at the Institute of Electron Technology was analysed by high-resolution transmission electron microscopy (HRTEM with the aid of image simulation and image processing. In spite of specimen damage during ion-milling TEM specimen preparation, columns of Ga and As atoms in the GaAs and columns of Al and s atomis in the AlAs were positioned in the (110) HRTEM images.