Flash EEPROM multi-level programming requires accurate control of programmed threshold voltages. A hot carrier convergent programming method with drain current monitoring is proposed to reduce both Vth dispersion and write-erase window closure during endurance test. Feasibility and improved reliability is demonstrated for a four level storage on 0.35 /spl mu/m flash cells.
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机译:Flash EEPROM多级编程要求对已编程的阈值电压进行精确控制。提出了一种具有漏电流监控的热载流子收敛编程方法,以减少耐久性测试期间的Vth色散和写擦除窗口关闭。在0.35 / spl mu / m闪存单元上进行四级存储时,已证明了可行性和更高的可靠性。
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