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Detectability and printability of programmed defects in the contact layer for 256-Mb-DRAM grade reticle

机译：256 Mb-DRAM级标线在接触层中的编程缺陷的可检测性和可印刷性

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Abstract: Abstract not available.

机译：摘要：摘要不可用。

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《16th Annual BACUS Symposium on Photomask Technology and Management》|1996年|p.548-561|共14页
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Yong H. Kim; Samsung Electronics Co. Ltd.; Suwon; South Korea; Jin-Hong Park; Samsung Electronics Co. Ltd.; Kyungki-Do Suwon; South Korea; Kyung-Hee Lee; Samsung Electronics Co. Ltd.; Suwon; South Korea; Han-Ku Cho; Samsung Electronics Co. Ltd.; Suwon; South Korea; Hee-Sun Yoon; Samsung Electronics Co. Ltd.; Yongin-City Kyungki-Do; South Korea.;
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中图分类无线电电子学、电信技术;
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专利

1. Study on Critical Dimension of Printable Phase Defects Using an Extreme Ultraviolet Microscope: II. Definition of Printable Threshold Region for Hole-Pit Programmed Defects [J] . Yoshito Kamaji, Toshiyuki Uno, Kei Takase, Japanese journal of applied physics.Part 1.Regular papers & short notes . 2010,第12期

机译：使用极紫外显微镜研究可印刷相缺陷的临界尺寸：II。孔坑缺陷的可打印阈值区域的定义
2. Detection, Repair and Printability of Reticle Defects [J] . Khoi Phan, Christopher Spence, John Riddick, Semiconductor International . 2001,第10期

机译：十字线缺陷的检测，修复和可印刷性
3. Repairing amplitude defects in multilayer-coated extreme-ultraviolet lithography reticles by use of a focused ion beam [J] . Anton Barty, Stefan Hau-Riege, Dan Stearns, Applied Optics . 2004,第36期

机译：通过聚焦离子束修复多层涂层极紫外光刻掩模版中的振幅缺陷
4. Detectability and printability of programmed defects in the contact layer for 256-Mb-DRAM grade reticle [C] . Yong H. Kim, Jin-Hong Park, Kyung-Hee Lee, Annual Symposium on photomask technology and management . 1996

机译：用于256 MB-DRAM级掩模版的接触层中编程缺陷的可检测性和可印刷性
5. Local area mask patterning of extreme ultraviolet lithography reticles for native defect analysis [D] . Lyons, Adam 2013

机译：用于自然缺陷分析的极紫外光刻掩模版的局部掩模图案
6. Diagnostic ability of retinal nerve fiber layer maps to detect localized retinal nerve fiber layer defects [O] . J W Shin, K B Uhm, W J Lee, 2013

机译：视网膜神经纤维层图的诊断能力可检测局部视网膜神经纤维层缺陷
7. Simulation of Sub-Halfmicron Mask Defect Printability at 1X Reticle Magnification [O] . Warren W. Flack 1997

机译：亚半微米掩模缺陷在1X掩模版放大倍数下的可印刷性模拟

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