首页> 外文会议>16th Annual BACUS Symposium on Photomask Technology and Management >Benchmark study of mask writer lithography systems
【24h】

Benchmark study of mask writer lithography systems

机译:掩模写入机光刻系统的基准研究

获取原文

摘要

Abstract: SEMATECH has conducted a mask writer benchmark study in order to provide a description of the lithographic capability of the mask writer industry. Systems claimed by their manufacturers to have the ability to support 0.35 um or better lithography groundrules in a manufacturing environment were the focus of this study. The study describes the average performance and identifies any significant differences in capability among the various mask writer tools. The benchmarking was conducted as a blind study. Participant identity was protected by using the services of Arthur Anderson & Co. The parameters described in this paper include critical dimension (CD) control, registration, overlay (two plates), and throughput. Results of the study show that no participant consistently demonstrated the 50 nm CD uniformity performance required by the 1995 SIA roadmap for 0.35 um lithography. However, half the participants were able to demonstrate registration performance consistent with the Roadmap requirement of 70 nm 3 sigma. While throughput results varied greatly, one participant demonstrated superior capability.!2
机译:摘要:SEMATECH进行了掩模写入器基准测试,以描述掩模写入器行业的光刻能力。本研究的重点是制造商声称具有在制造环境中支持0.35 um或更佳光刻基础规则的系统。该研究描述了平均性能,并确定了各种掩模写入器工具之间在功能上的任何显着差异。基准测试是一项盲目的研究。参与者的身份受到Arthur Anderson&Co.的服务的保护。本文描述的参数包括关键尺寸(CD)控制,注册,覆盖(两块盘子)和吞吐量。研究结果表明,没有参与者始终如一地证明1995年SIA路线图要求的0.35 um光刻的50 nm CD均匀性。但是,一半的参与者能够证明其注册性能符合“路线图”要求的70 nm 3 sigma。尽管吞吐量结果差异很大,但一位参与者表现出了卓越的能力。!2

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号