X-ray diffraction analysis of self-organized InAs quantum dots

摘要

Abstract: A series sample of GaAs/InAs/GaAs was studied by double crystal x-ray diffraction and the investigation based on the x-ray dynamical theory was used to analyze the x-ray diffraction results. As the thickness of InAs layer exceeded 1.7 monolayer, 3-dimensional InAs islands occurred. Pendellosung fringes were shift. A multilayer structure model is proposed to describe the strain status in the InAs islands and the sample and a good agreement is obtained between the experimental and theoretical curves. !12