Impact of lattice mismatch on the electrical properties of AlAs/InGaAs/InAs resonant tunneling diodes

摘要

Abstract: Through the use of a vertically-integrated resonant tunneling diode heterostructure, we have examined the impact of lattice-mismatch on the electrical properties of the AlAs/In$- 0.53$/Ga$-0.47$/As/InAs resonant tunneling diode (RTD). For strained-layers below the critical thickness, the current-voltage characteristics of the RTD track the bandgap change. In contrast, for strained layers greater than the critical thickness, the current-voltage characteristics are significantly degraded in the case of three-dimensional relaxation, but retain their characteristics in the case of two-dimensional relaxation. !20