High-power high-efficiency and highly uniform 1.3-um uncooled InGaAsP/InP strained multiquantum-well lasers

摘要

Abstract: In order to meet the increasing market needs foruncooled lasers for such applications as fiber-in-the-loop, high efficiency, high power, and highlyreliable 1.3 micrometer uncooled InGaAsP/InP strainedmulti-quantum well Fabry-Perot lasers were fabricatedwith 50 mm wafer processing. Slope efficiency as highas 0.39 W/A and peak power as high as 46 mW at 85degrees Celsius was obtained by optimizing the devicestructure for high temperature operation. We have alsodemonstrated excellent uniformity and reproducibilityover 6 wafers. Reliability was also shown to be verygood. More than 10,000 chips sites are available on a50 mm wafer, and the cost is expected to be low.Because of the high performance, these lasers areexpected to be used for various applications. !10