Understanding the differences in the effective-field dependence of electron and hole inversion layer mobilities

摘要

For the first time, results from a first-principles study of carrier quantization are coupled to realistic Monte Carlo (MC) simulations to investigate MOS inversion layer electron and hole mobilities. These simulations provide insights into the source of the differences between the effective-field dependencies of electron (inverse square) and hole (inverse linear) inversion layer mobilities at high effective-fields.