/spl delta/-doped source/drain 0.1-/spl mu/m n-MOSFETs with extremely shallow junctions

摘要

A method of using shallow junctions and a low substrate doping concentration in 0.1- to 0.2-/spl mu/m MOSFETs has been developed. An Sb /spl delta/-doping technique is used to form extremely shallow (x/sub j/>20 nm) junctions. A 0.17-/spl mu/m n-MOSFET can be operated with a peak substrate-doping concentration of 1/spl times/10/sup 17/ cm/sup -3/. This approach reduces the junction capacitance, the junction leakage, and the V/sub th/ shift caused by substrate bias.