Reducing source and drain resistances in InGaP/InGaAs doped-channel HFETs using /spl delta/-doping Schottky layer

摘要

InGaP/InGaAs/GaAs dual doped-channel field-effect transistors (DCFETs) have been fabricated and demonstrated in terms of their DC, RF, and power performances. These performances can be improved by inserting a /spl delta/-doping layer on top of the undoped Schottky layer, which can reduce the ohmic contact resistances of DCFETs.