Determination of minority carrier diffusion lengths insemiconductor wafers with non-uniform carrier lifetimes by the surfacephotovoltage technique

摘要

An analytical theory of the surface photovoltage method for thedetermination of the minority carrier diffusion lengths in semiconductorwafers with non-uniform carrier lifetimes is presented. Values ofminority carrier diffusion lengths extracted using the theory agree wellwith those from full numerical simulations. Experimental verification ofthe theory is currently in progress