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Method for nondestructive measurement of minority carrier diffusion length and minority carrier lifetime in semiconductor devices
Method for nondestructive measurement of minority carrier diffusion length and minority carrier lifetime in semiconductor devices
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机译:半导体器件中少数载流子扩散长度和少数载流子寿命的无损测量方法
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摘要
A method is provided for nondestructive measurement of minority carrier diffusion (Lp) length and accordingly minority carrier lifetime (Óp) in a semiconductor device. The method includes the steps of: reverse biasing a semiconductor device under test, scanning a focused beam of radiant energy along a length of the semiconductor device, detecting current induced in the DUT by the beam as it passes point-by-point along a length of the DUT, detecting current induced in the semiconductor device by the beam as it passes point-by-point along the scanned length of the semiconductor device to generate a signal waveform (Isignal), and determining from the Isignal waveform minority carrier diffusion length (Lp) and/or minority carrier lifetime (Óp) in the semiconductor device.
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