The present invention relates to a method of minority carrier diffusion length and hence the non-destructive measurement of the minority carrier lifetime (Op) in accordance with the semiconductor device. The method includes testing a semiconductor device that is; in points in accordance with the step of scanning the focused beam, the length of the beam DUT of the radiation energy along the length of the steps, a semiconductor device washing the station via (semiconductor device under test DUT) a semiconductor device by the beam as it passes through, in points that the beams to generate a step of detecting a current induced in the DUT by the beam, the signal waveform (I signal) along the length of the scanning of the semiconductor element as it passes through detecting a current induced and determining the minority carrier diffusion length (Lp) and thus minority carrier lifetime (Op) in accordance with the I signal from the waveform.
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