Planar InP burying growth around a dry-etched mesa by addition of CH/sub 3/Cl during MOVPE

摘要

Planar burying growth of InP around a dry-etched stripe mesa has been made with metalorganic vapor phase epitaxy (MOVPE) by adding CH/sub 3/Cl to the process gases. The planarization effect of CH/sub 3/Cl addition is striking especially in relatively low growth temperature conditions. From the growth behavior around mesas and a study of growth rate modifications, we consider that the migration enhancement of In atoms and the induced dependence of growth rate on the crystallographic orientation produces the planar burying growth. Using reactive ion etching (RIE) for mesa fabrication and adding CH/sub 3/Cl in MOVPE growth, we demonstrated 1.5 /spl mu/m InGaAsP/InP buried-heterostructure (BH) laser diodes with Fe doped semi-insulating InP layers. We obtained comparable laser characteristics with those of conventional wet-etched mesa laser diodes.