Growth and characterization of p-type InGaAs on InP substrates by LP-MOVPE using a new carbon-dopant source, CBrCl_3

摘要

Low-pressure metalorganic vapor-phase epitaxy (LP-MOVPE) growth of lattice-matched p-type InGaAs on InP substrates using a new dopant precursor, carbon trichloro bromide (CBrCl_3), has been investigated. The p-type conductivity with a hole concentration up to 10~(l9)cm~(-3) based on the Hall measurement has been achieved only in the samples grown under very limited conditions such as a Ⅴ/Ⅲ ratio below 5, a growth temperature around 540 to 550℃ and high growth rates over 100 nm/min. The X-ray rocking-curve analysis of these samples has revealed that the conduction type does not depend on the type of stress such as tensile or compression caused by a very small lattice mismatch within |Δa| ≤ 5 x 10~(-3). However, it has been found that samples with hole concentration over 10~(18)cm~(-3) always exhibit the tensile stress and the efficiency of the p-type doping has been enhanced by the introduction of tensile stress controlled by the growth.