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首页> 外文期刊>Journal of Electronic Materials >Growth and Characterization of Totally Relaxed InGaAs Thick Layers on Strain-Relaxed Paramorphic InP Substrates
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Growth and Characterization of Totally Relaxed InGaAs Thick Layers on Strain-Relaxed Paramorphic InP Substrates

机译:应变松弛多态InP衬底上完全弛豫的InGaAs厚层的生长和表征

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摘要

In this paper,we present a technological process that can be used to prepare strain-relaxed InAsP/InGaAs bilayer membranes,0.8% lattice mismatched to InP substrates,with diameters up to 300mum.It is shown that high-quality thick In_(0.65)Ga_(0.35)As layers can be grown fully relaxed on these membranes,without any structural defect,as demonstrated by atomic force microscopy (AFM),transmission electron microscopy (TEM),and photoluminescence (PL) characterizations.The critical thickness of InAs layers grown on InAs_(0.25)P_(0.75) templates is enhanced from 15 A to 60 A when compared to InP substrates.
机译:本文提出了一种可用于制备应变松弛的InAsP / InGaAs双层膜的工艺流程,该膜具有0.8%的晶格与InP衬底不匹配,直径可达300μm。结果表明,高质量的厚In_(0.65)如原子力显微镜(AFM),透射电子显微镜(TEM)和光致发光(PL)表征所示,Ga_(0.35)As层可以在这些膜上完全松弛生长,而没有任何结构缺陷.InAs层的临界厚度与InP衬底相比,在InAs_(0.25)P_(0.75)模板上生长的金属从15 A增加到60A。

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