semiconductor device comprising a semiconductor material inp or ingaasp ohmic contact with the p type and a surface of a semiconductor element, and method of production thereof.the ohmic contact has, successively from the surface, a layer of berillium and gold and a layer of gold.the surface on which the layers are deposited, is called a temperature less than the heat, and for a time was 440 c) residence for at least one minute.the choice, a layer of palladium may be positionnee between the surface and the layer of gold, and all the heat treatment that is under high temperatures.that is to say, less than 420.
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