首页> 外国专利> OHMIC CONTACT TO P-TYPE InP OR InGaAsP

OHMIC CONTACT TO P-TYPE InP OR InGaAsP

机译:与P型InP或InGaAsP的欧姆接触

摘要

semiconductor device comprising a semiconductor material inp or ingaasp ohmic contact with the p type and a surface of a semiconductor element, and method of production thereof.the ohmic contact has, successively from the surface, a layer of berillium and gold and a layer of gold.the surface on which the layers are deposited, is called a temperature less than the heat, and for a time was 440 c) residence for at least one minute.the choice, a layer of palladium may be positionnee between the surface and the layer of gold, and all the heat treatment that is under high temperatures.that is to say, less than 420.
机译:半导体器件,其包括与p型具有inp或ingaasp欧姆接触的半导体材料以及半导体元件的表面及其制造方法。该欧姆接触从该表面开始依次具有一层铍和金以及一层金。在其上沉积各层的表面称为温度,低于热量,并且在一段时间内为440 c)停留至少一分钟。选择时,可以在表面和该层之间放置一层钯金和所有在高温下进行的热处理,即少于420。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号