Optical properties of self-organized InGaAs/InP dots

摘要

The possibility of tuning the emission wavelength and of reducing the linewidth of self-organized dots is studied. Thin layers of In/sub 0.5/Ga/sub 0.5/As were selectively deposited on nanoscale InP islands on (100)GaAs. A tuning range of 100 meV was achieved for the emission from the dots. Also, a minimum FWHM of 8.5 meV was measured from an ensemble of dots, showing that the heteroepitaxial layer on the islands tends to homogenize the active volume of the dots.