Novel current-blocking laser structures using directly-bonded InP-SiO/sub 2/-InP

摘要

We propose a novel laser structure which uses a SiO/sub 2/ insulator sandwiched with InP as a current blocking layer. The structure has been successfully fabricated by directly bonding InP to SiO/sub 2/. A threshold current density of 1.9 kA/cm/sup 2/ acid a maximum output power of 60 mW have been achieved for a 1.3-/spl mu/m InGaAsP laser with a bulk active layer and a 300-/spl mu/m cavity. This result implies that the leakage current is negligible. The parasitic capacitance has been measured to be 31 pF even for a laser with an area of 300 /spl mu/m/spl times/300 /spl mu/m.