Monolayer growth in InP/GaInAs quantum wells grown by selective area MOVPE

摘要

We investigated optical properties (cathodoluminescence linescans) of selectively deposited quantum wells. As expected for selective MOVPE, composition and growth rate of bulk layers and quantum wells with thicknesses above 6 nm are determined by gas phase diffusion. Thin quantum wells (L/sub z/>6 nm) showed a clearly visible thickness variation in monolayer steps. The monolayer steps are extended at least over several 10 /spl mu/m depending on the mask pattern. Their formation can be influenced by the growth conditions, especially growth interruptions at the heterointerfaces. Based on our recent experiments, the lower interface (InP-GaInAs) is supposed to be crucial for the generation of monolayer steps.