MOMBE growth of InGaAsP films for optoelectronic devices

机译：用于光电器件的InGaAsP膜的MOMBE生长

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This paper reviews the MOMBE growth features of InGaAsP and their MQWs compared with those of MOCVD, and introduces recent MOMBE topics for optoelectronic devices. Devices considered are surface emitting lasers, strained MQW LDs, and multi-wavelength laser diode arrays.

机译：本文回顾了InGaAsP及其MQW与MOCVD相比MOMBE的增长特征，并介绍了有关光电器件的最新MOMBE主题。所考虑的器件是表面发射激光器，应变MQW LD和多波长激光二极管阵列。

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《Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on》|1995年|P.321-324|共4页
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Sugiura H.;
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中图分类无线电电子学、电信技术;
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MOMBE growth of InGaAsP films for optoelectronic devices

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