Heavily carbon doped InGaAs lattice matched to InP grown by LP-MOCVD using TMIn, TMGa and liquid CCl/sub 4/

摘要

Heavily carbon doped InGaAs lattice matched to InP was grown by LP-MOCVD using all-methyl metalorganics and liquid CCl/sub 4/ as a carbon source. The impact of growth conditions on conduction type and alloy composition of InGaAs was studied. The effect of thermal annealing conditions on the hole concentration and mobility of C-InGaAs was investigated, and carbon displacement from the group III site to the arsenic site as well as reduced hydrogen passivation are suggested as possible mechanisms for the significant increase of hole concentration upon annealing. Base specific contact resistances as low as 5/spl times/10/sup -7/ /spl Omega/-cm/sup 2/ were demonstrated by depositing Ti/Pt/Au non-alloyed ohmic contacts on annealed base layers.