A monolithically integrated photoreceiver realized by InP/InGaAs double-heterostructure bipolar transistor technologies for optical/microwave interaction systems

摘要

This paper presents, for the first time, a monolithically integrated long-wavelength photoreceiver that uses InP/InGaAs double-heterostructure bipolar transistors (DHBT's) and layer- and process-compatible three-terminal double-heterostructure phototransistors (DHPT's) for band-limited optical/microwave interaction systems. The developed DHPT/DHBT photoreceiver yields the very large photo-response of 6.3 A/W at 15.3 GHz due to the utilization of the opto-microwave compatible DHPT/DHBT combination and an inductor attached at the base terminal of the DHPT. The entire DHPT/DHBT photoreceiver, including the O/E conversion part, is designed using conventional MMIC design techniques, and good design accuracy is confirmed.