Within the near future, breakthrough for new materials and technologies is essential to overcome the barriers. In lithography, new light source for optical or non optical system (E-beam, X-ray) should be introduced. Requirements of high e material for capacitor, CVD Cu plus low e material for interconnection, CMP for planarization, are becoming more stringent as a result of device scaling down. ULSI technology will reach the sub-quarter micron range before the end of this century. Since the semiconductor industry will face with many problems, as mentioned above, it is necessary to make major efforts to overcome the barriers by C & C (Competition & Cooperation).
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