Stress-induced low-level leakage current in ultrathin silicon dioxide films is correlated with neutral oxide trap generation based on first-order kinetics. The conduction mechanism is explained by Fowler-Nordheim tunneling from the leakage spot, generated at the cathode interface, to the neutral oxide trap level, lower in energy than the SiO/sub 2/ barrier height.
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机译:基于一阶动力学,超薄二氧化硅薄膜中应力诱导的低电平泄漏电流与中性氧化物陷阱的产生相关。导电机理可以通过Fowler-Nordheim隧穿来解释,该隧穿从阴极界面处产生的泄漏点到能量低于SiO / sub 2 /势垒高度的中性氧化物陷阱能级。
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