Aging behavior of InP substrates prepared with 2 different epi-ready processes

摘要

In this work we investigate the aging behavior of InP substrates prepared with 2 different epi-ready processes based on "thin" 4-5 /spl Aring/ and "thick" 7-8 /spl Aring/ oxide layers. The oxide layers are characterized by X-ray photoelectron spectroscopy (XPS) after storage in both air and nitrogen. While there is no variation of the oxide thickness when substrates are stored under nitrogen, for a "thin" 4-5 /spl Aring/ oxide layer stored in air, the oxide thickness increases with time. However the photoluminescence behavior of MBE grown InAs/AlInAs quantum wells localised near the interface and SIMS profiles show no aging effect after 6 months if an optimized oxide desorption procedure (In stabilization of the surface) is used.