Advanced statistical process control for ion implantation

摘要

The ability of several advanced statistical process control (SPC) methods to monitor an advanced ion implanation center over a period of six weeks is investigated. Sheet resistance data plotted on Box and Whiskers and Cpk charts are compared to the traditional method of plotting data by X-charts. Conclusions are made about these various methods of SPC and their ability to (1) detect anomalies in the process of ion implantation, (2) track the performance of the ion implanter, and (3) address the reality of qualifying process equipment which uses a large number of recipes each day.