首页> 外文会议>Electronic Manufacturing Technology Symposium, 1992. IEMT 1992. 12th International >Process and technology choices for manufacturing high density interconnections on silicon surstrates for multichip modules
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Process and technology choices for manufacturing high density interconnections on silicon surstrates for multichip modules

机译:在多芯片模块的硅基板上制造高密度互连的工艺和技术选择

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Multichip module technology provides an advanced method for connecting integrated circuit chips together to produce a circuit assembly with minimum chip-to-chip spacing. The naked IC chips are attached to a substrate which is provided with a dense pattern of interconnections. The metal track widths on this substrate are finer than those that are possible in conventional hybrid circuits. In this paper, the emphasis is placed on multichip modules based on silicon hybrid technologies where silicon substrates, metal tracks and organic inter level dielectric are used. Processes for manufacturing such substrates have been developed at GEC-Marconi Materials Technology. The type of alloys suitable for forming the metal tracks and the methods available for depositing and patterning such alloys will be discussed. The relative merits of these choices and their implications on the manufacturability of the substrate will be considered. The criteria for choosing an organic dielectric and the techniques which can be used for' patterning it to provide vias between the metal layers are also discussed. The multi-layer interconnect structures produced underwent structural analysis and the electrical integrity was assessed.
机译:多芯片模块技术提供了一种先进的方法,可以将集成电路芯片连接在一起,从而以最小的芯片到芯片间距生产电路组件。裸IC芯片被附接到基板,该基板设置有密集的互连图案。该基板上的金属走线宽度比常规混合电路中的金属走线宽度更细。在本文中,重点放在基于硅混合技术的多芯片模块上,其中使用了硅基板,金属走线和有机层间电介质。 GEC-Marconi材料技术公司已经开发了制造这种衬底的方法。将讨论适合于形成金属轨迹的合金的类型以及可用于沉积和构图这种合金的方法。将考虑这些选择的相对优点及其对基板可制造性的影响。还讨论了选择有机电介质的标准以及可用于对其进行图案化以在金属层之间提供通孔的技术。对产生的多层互连结构进行了结构分析,并评估了电气完整性。

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