Photoreflectance study of plasma etching effect on InP

摘要

The results of photoreflectance (PR) measurements performed to study the effect of plasma etching on InP are presented. InP samples were etched by CF/sub 4/ plasma. Rapid thermal annealing (RTA) was conducted to remove the plasma-induced damage. Significant PR spectra distortions occur on plasma etched samples. Both residual impurity-related signals and plasma-induced damage modulation are found in the PR spectra of n-type doped and undoped InP. The pronounced Franz-Keldysh oscillation (FKO) is observed in p-type doped InP. In undoped InP, the plasma induced damage was totally removed by a 390 degrees C, 20 s RTA treatment.