MOVPE growth of In-containing compounds by new TMI supply system

摘要

A system to supply trimethylindium (TMI) developed for low-pressure metalorganic vapor-phase epitaxy (MOVPE) growth of InGaAs and InP is described. Using the system, the stability in TMI supply was improved and fluctuation was minimized to +or-0.4%. This makes fine control of a lattice constant possible. High-purity InP with a carrier concentration of 7.5*10/sup 14/ cm/sup -3/ and mobility of 248000 cm/sup -2//V-s at 77 K was successfully grown. The contamination from the system was extremely low.