Measurement of conduction band discontinuity in pseudomorphic In/sub x/Ga/sub 1-x/As/In/sub 0.52/Al/sub 0.48/As heterostructures

机译：伪形In / sub x / Ga / sub 1-x / As / In / sub 0.52 / Al / sub 0.48 / As异质结构中导带不连续性的测量

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The current-voltage-temperature (I-V-T) measurement technique is applied, in conjunction with capacitance-voltage (C-V) measurements, to n/sup +/-In/sub x/Ga/sub 1-x/As/In/sub 0.52/Al/sub 0.48/As/sup -/-In/sub 0.53/ Ga/sub 0.47/As semiconductor-insulator-semiconductor (SIS) capacitors. The compositional dependence of the conduction band discontinuity over the range of 0.43 >or=x>or=0.64 was obtained.

机译：将电流 - 电压 - 温度（IVT）测量技术与电容 - 电压（CV）测量相结合，到N / SUP +/- IN / SUB X / GA / SUB 1-X / AS / IN / SUB 0.52 / Al / Sub 0.48 / AS / N / SUP - / - IN / SUM 0.53 / GA / SUB 0.47 /作为半导体绝缘体 - 半导体（SIS）电容器。获得在0.43>或= X>或= 0.64范围内的导带不连续的组成依赖性。

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《Indium Phosphide and Related Materials, 1991., Third International Conference.》|1991年|P.511-514|共4页
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Huang; J.H.; Lalevic; B.;
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中图分类无线电电子学、电信技术;
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专利

1. Pseudomorphic In/sub x/Ga/sub 1-x/As/In/sub 0.52/Al/sub 0.48/As modulation doped heterostructures grown by LP-MOVPE [J] . Pereira R.G., Yavich B. Electronics Letters . 1998,第22期

机译：LP-MOVPE生长的伪晶In / sub x / Ga / sub 1-x / As / In / sub 0.52 / Al / sub 0.48 / As调制掺杂异质结构
2. Determination of the conduction‐band discontinuity between In0.53Ga0.47As/In0.52Al0.48As using n+‐InGaAs/InAlAs-‐InGaAs capacitors [J] . Journal of Applied Physics . 1986,第5期

机译：使用n + InGaAs / InAlAs / n-InGaAs电容器确定In0.53Ga0.47As / In0.52Al0.48As之间的导带不连续性
3. Abnormal Alignment of Misfit Dislocations in In_(0.52)Al_(0.48)As/In_(x)Ga_(1-x)As/In_(0.52)Al(0.48)As/InP Heterostructure [J] . 吴巨, 李含轩, 王占国中国物理快报：英文版 . 1998,第001期

机译：IN_（0.52）AL_（0.48）的错位位错的异常对准AS / IN_（X）GA_（1-X）AS / IN_（0.52）AL（0.48）AS / INP异质结构
4. Measurement of conduction band discontinuity in pseudomorphic In/sub x/Ga/sub 1-x/As/In/sub 0.52/Al/sub 0.48/As heterostructures [C] . Huang J.H., Lalevic B., Institute of Electric and Electronic Engineer International Conference: Indium Phosphide and Related Materials . 1991

机译：在/子X / Ga / sub 1-x / AS / IN / sub 0.52 / Al / sub 0.48 /作为异质结构中的伪形中的传导带中断的传导带不连续性的测量
5. Strained indium(0.52)aluminum(0.48)arsenide/indium(x)gallium(1-x)arsenide (x greater than 0.53) high electron mobility transistors (HEMT's) for microwave/millimeter -wave applications. [D] . Ng, Geok Ing. 1990

机译：应变的铟（0.52）铝（0.48）砷化物/铟（x）镓（1-x）砷化物（x大于0.53）高电子迁移率晶体管（HEMT），用于微波/毫米波应用。
6. In situ polarization and dielectric property measurements of Pb(Zr0.52Ti0.48)O3 ferroelectric nanocrystals [O] . Haifa Zhai, Yurong Jiang, Hongjing Li, 2017

机译：Pb（Zr0.52Ti0.48）O3铁电纳米晶体的原位极化和介电性能测量
7. Low‐ and high‐field transport properties of pseudomorphic InxGa1−xAs/In0.52Al0.48As (0.53≤x≤0.65) modulation‐doped heterostructures [O] . W.‐P. Hong, G. I. Ng, P. K. Bhattacharya, 1988

机译：假素INXGA1-XAS / IN0.52AL0.48AS（0.53≤x≤0.65）调制掺杂异质结构的低 - 和高场传输性能
8. Low-Temperature Microwave Characteristics of Pseudomorphic In(x)Ga(1-x)As/In(0.52)Al(0.48)As Modulation-Doped Field-Effect Transistors [R] . Lai, R., Bhattacharya, P. K., Alterovitz, S. A., 1990

机译：伪形In（x）Ga（1-x）as / In（0.52）al（0.48）作为调制掺杂场效应晶体管的低温微波特性

Measurement of conduction band discontinuity in pseudomorphic In/sub x/Ga/sub 1-x/As/In/sub 0.52/Al/sub 0.48/As heterostructures

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