首页> 中文期刊> 《中国物理快报:英文版》 >Abnormal Alignment of Misfit Dislocations in In_(0.52)Al_(0.48)As/In_(x)Ga_(1-x)As/In_(0.52)Al(0.48)As/InP Heterostructure

Abnormal Alignment of Misfit Dislocations in In_(0.52)Al_(0.48)As/In_(x)Ga_(1-x)As/In_(0.52)Al(0.48)As/InP Heterostructure

         

摘要

It was observed with transmission electron microscopy in the In_(0.52)Al_(0.48)As/In_(x)Ga_(1-x)As/In_(0.52)Al(0.48)As/InP heterostructure that misfit dislocation lines deviate from the<110>directions at a certain angle depending on the indium content x.Such an abnormal alignment of misfit dislocations is explained in terms of an alloy effect on the formation of single jogs on the misfit dislocations in the interface between the Ⅲ-Ⅳ ternary compounds.

著录项

  • 来源
    《中国物理快报:英文版》 |1998年第1期|P.50-51|共2页
  • 作者

    吴巨; 李含轩; 王占国;

  • 作者单位

    Laboratory of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences Beijing 100083Laboratory of Electron Microscopy Chinese Academy of Sciences Beijing 100080;

    Laboratory of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences Beijing 100083;

    Laboratory of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences Beijing 100083;

  • 原文格式 PDF
  • 正文语种 chi
  • 中图分类 金属学与热处理;
  • 关键词

    alloy; As; alignment;

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