Low-frequency gain dispersion, optical response, and 1/f noise in ion-implanted InP JFETs

摘要

The effects of trapping mechanisms on the transconductance, output resistance, optical response, and low-frequency noise of an ion-implanted InP JFET are discussed. The results indicate a decrease in both the transconductance and output resistance occurring primarily between 100 Hz and 100 kHz. Optical response time constants and noise peaks corresponding to these frequencies were observed. The primary trapping mechanism responsible for the low-field transconductance dispersion appears to be a surface state with an activation energy of 0.28 eV.