Impurity induced disordering of GaInAs quantum wells with barriers of AlGaInAs or of GaInAsP (MQW waveguides)

摘要

The use of fluorine and boron to disorder two material systems for use at 1.5 mu m, GaInAs/AlGaInAs and GaInAs/GaInAsP, both lattice-matched to InP, is discussed. Three structures are investigated: two GaInAsP multiple quantum well (MQW) structures, a separate confinement heterostructure (SCH) and a graded index structure (GRIN), and an AlGaInAs MQW structure. It is shown that the P-quaternary disorders without any implants at annealing temperatures above 500 degrees C, and the Al-quaternary is stable up to annealing temperatures of 650 degrees C. At annealing temperatures of 600 degrees C for the P and 650 degrees C for the Al quaternary. boron causes some intermixing, probably due to the damage caused by implantation. A significant blue shift was achieved in material implanted with fluorine while, under the same annealing conditions, the control samples remained unchanged.