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Effect of Intermetallic Morphology Evolution on Void Formation in Ni/Sn/Ni Micro Joints

机译:金属间形态演变对Ni / Sn / Ni微接头空洞形成的影响

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A common approach to 3D assembly is to stack flip chips with micro bumps or 5-20μm thick caps of Sn or SnAg on Ni or Cu pads or pillars. The use of Ni leads to much slower growth of the intermetallic bond layers during and after assembly than Cu, but a thermal history with many reflows and perhaps deliberate annealing may still lead to complete reaction to form an intermetallic (IMC) joint. This has been shown to lead to the entrapment of Sn and eventually severe voiding when the uneven Ni3Sn4 layers from the opposing pads impinge on each other. A relationship between the morphology of the Ni3Sn4 and the formation of voids would seem credible as this IMC grows by diffusion of Sn through it to the Ni surface. A systematic study was therefore conducted to ascertain which, if any, design, materials, or process parameters might affect the morphology.As expected, the combination of alloy, solder thickness, Ni properties (high purity vs. electroplated Ni with and without additives), reflow profile, and subsequent thermal history did in fact have strong effects on both the initial IMC morphology and the growth rate. However, a new approach to the quantification of the IMC morphology of actual concern led to the conclusion that the only parameters that affect voiding are the solder thickness and the total pad area. This assessment was validated through measurements on joints between two Ni surfaces.
机译:3D组装的常见方法是在镍或铜垫或柱上堆叠带有微凸点或5-20μm厚的Sn或SnAg帽的倒装芯片。 Ni的使用在组装过程中和组装后会导致金属间键合层的生长比Cu慢得多,但是具有许多回流的热历史以及可能的故意退火可能仍会导致形成金属间(IMC)接头的反应完全。已经表明,这会导致Sn的截留并最终在不均匀的Ni时产生严重的空洞 3 4 来自相对垫的各层彼此碰撞。 Ni的形态之间的关系 3 4 并且随着IMC通过Sn扩散穿过Sn扩散到Ni表面而形成空隙,这似乎是可信的。因此进行了系统的研究,以确定设计,材料或工艺参数(如果有的话)可能会影响形貌,如预期的那样,合金,焊料厚度,Ni性能(高纯度vs.含或不含添加剂的电镀Ni的组合)的组合实际上,回流曲线和随后的热历史确实对初始IMC形态和生长速度都产生了强烈影响。但是,一种新的量化实际关注的IMC形态的方法得出的结论是,影响空隙的唯一参数是焊料厚度和总焊盘面积。通过对两个镍表面之间的接合处进行测量来验证该评估。

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