Low dark current designs for mesa type SWIR photodetectors

摘要

Extremely low level dark current values arc required for SWIR detection during the night when there is no active illumination due to weak sources and the lack of self emission. InGaAs detectors with planar pixel structures are the popular choice in SWIR range, even though there are some shortcomings such as the incompatability with dual color applications and the not tunable cut-off wavelength. To address these points, two nBn structured photodetector designs covering SWIR and extended SWIR in InGaAs material system will be discussed here.