High Accurate Representation of Turn-on Switching Characteristics by New IGBT and FWD Compact Models for High Power Applications

摘要

In this paper, we report a newly developed the insulated gate bipolar transistor (IGBT) and the free-wheeling diode (FWD) compact models considered with bipolar carrier dynamics for prediction of power-loss and Electro-Magnetic-Interference (EMI) noise accurately. The capabilities of the proposed IGBT and FWD models considered with carrier dynamics are demonstrated by reproduction of the measured turn-on switching waveform for multiple external gate resistance (Rg) values. In addition, it is also demonstrated that the proposed models can be successfully utilized for different collector currents and temperature conditions with high convergence.