Investigation of Photoluminescence Voltage PL-V Measurement: Correlation to Capacitance Voltage C-V for Si/Dielectric Interface Characterization

摘要

We present an innovative approach of bias dependent photoluminescence characterization (PL-V) involving industrial Room Temperature Photoluminescence (RTPL) combined with corona charging. PL-V is performed on silicon oxide and silicon nitride films prepared on p-type silicon substrates. Results are directly compared to Capacitance-Voltage (C-V) measurements. A linearized model for PL-V has also been developed to understand the physical properties associated with this technique and the key similarities with C-V characterization. We finally show the sensitivity of PL-V to surface state density whose determination can benefit passivation quality studies.